FilSiC – From the epi layer to the chip

03/02/2015
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FilSiC – From the epi layer to the chip

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application/pdf FilSiC – From the epi layer to the chip Grégory Grosset, Laurent Roux, Pierre Brosselard, Philippe Cussac
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FilSiC – From the epi layer to the chip

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<resource  xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"
                xmlns="http://datacite.org/schema/kernel-4"
                xsi:schemaLocation="http://datacite.org/schema/kernel-4 http://schema.datacite.org/meta/kernel-4/metadata.xsd">
        <identifier identifierType="DOI">10.23723/10638/20138</identifier><creators><creator><creatorName>Grégory Grosset</creatorName></creator><creator><creatorName>Laurent Roux</creatorName></creator><creator><creatorName>Pierre Brosselard</creatorName></creator><creator><creatorName>Philippe Cussac</creatorName></creator></creators><titles>
            <title>FilSiC – From the epi layer to the chip</title></titles>
        <publisher>SEE</publisher>
        <publicationYear>2017</publicationYear>
        <resourceType resourceTypeGeneral="Text">Text</resourceType><dates>
	    <date dateType="Created">Sun 1 Oct 2017</date>
	    <date dateType="Updated">Sun 1 Oct 2017</date>
            <date dateType="Submitted">Thu 14 Jun 2018</date>
	</dates>
        <alternateIdentifiers>
	    <alternateIdentifier alternateIdentifierType="bitstream">aadbd01daf01f280f7592d1e51e32c2eb6b76282</alternateIdentifier>
	</alternateIdentifiers>
        <formats>
	    <format>application/pdf</format>
	</formats>
	<version>34159</version>
        <descriptions>
            <description descriptionType="Abstract"></description>
        </descriptions>
    </resource>
.

FilSiC – From the epi layer to the chip Grégory GROSSET (1), Laurent ROUX (1), Pierre BROSSELARD (2), Philippe CUSSAC (3) 1: IBS, ZI Peynier, Rue gaston imbert prolongée 13790 Peynier, gregory.grosset@ion-beam-services.fr 2: Laboratoire AMPERE, Pierre.Brosselard@insa-lyon.fr, 3: CIRTEM, p.cussac@cirtem.com Abstract The development of electric vehicles, new energy sources and smart grids, optimize the use of electricity in industry will require the development of high power converters and high efficiency systems to operate at very high temperatures. SiC (Silicon Carbide) components are at the heart of these developments to increase efficiency, reduce the size of the converters and simplify cooling systems. Various R&D programs supported by French public organizations (DGA, DGCIS ...) developed and maintained expertise in the field of components in SiC in France, laboratories, large groups and some small active in the field. Several SME working on this problematic (CIRTEM, ECA-EN, IBS, NOVASIC, Vegatec), based on their complementary expertise and support reference laboratories (AMPERE, LAPLACE), decided to band together to overcome technical locks leading to the creation of a production line for SiC components: FilSiC. Introduction Wide bandgap semiconductors, such as SiC or GaN, are known to be highly suitable for the fabrication of power electronics devices. Their wide band gap allows high temperature operation while high breakdown electric field enables the managing of very high voltage [1]. 1200 V SiC unipolar devices, such as VJFETs, BJTs and MOSFETs have already proven to be useful for the fabrication of high power converter. For GaN, 200 V and 600 V devices are commercialized. The purpose of FilSiC is to turn these R&D skills in a real SiC components production line, addressing the high voltages (> 2.2 kV) and specific applications at a lower voltage (high temperature), with the objective to become a contestant on the European and world market. Innovations are expected in: - High voltage components (3.5 kV diodes and JFETs industrialization at first) - Technologies to produce them (thick epitaxy, high temperature annealing, ion implantation at high temperature, dedicated services specific equipment). - New applications using these components. SiC advantages Thermal runaway temperature which ensures a high blocking voltage and operation even at high temperatures. (Theoretically up to 600°C) - SiC: operation without degradation at 250°C. - Si: decreasing performance from 85°C Field high thereby holding a high breakdown voltage (SiC = 100V / µm, Si = 10V / µm) Higher switching frequency for the SiC components. The SiC properties reduce the footprint: - drive more current and voltage to a smaller area - Cooling systems less - Switching frequency greater thereby reducing the number of passive components and therefore to reduce the module size. Fig. 1: Size comparison for 3.3kV device Goal of the FilSiC program The goal of the pilot line is to develop the epi layer on the SiC bulk and the die. To achieve this we must increase the throughput of all the elementary steps for a component manufacturing develop of a characterization method. We plan to do this by using components developed from R&D projects as test vehicles. . Fig. 2: program’s parterns This pilot line development pass throught three key steps. - Thick epi layer capability for high power voltage component (NOVASIC): - Design and fabrication of a fully automatized high temperature implanter - Design and fabrication of a high temperature annealing furnace (VEGATEC) Realization of demonstrators to improve our pilot line We form an industrial committee to discuss with our future customer and know their needs in therm of range of voltage, size, temperature operating and type of components. Two types of components are selected first to improve this pilot line: - JBS diodes 3.5kV - JFET transistor 3.5kV Design and fabrication of JBS diodes. JBS diode is a very good trade- off between a pure Schottky diode (low threshold voltage, fast switching) and a bipolar rectifier (high forward current, high breakdown voltage). Fig. 3 shows the cross section of a JBS diode with L P as the P + /N junction length and L N as the Schottky contact length. Fig. 3: Schematic cross-section of a 4H-SiC JBS Diode [2] The diodes have been manufactured at IBS Company, thanks to seven photolithography masks on three wafers from CREE. The diodes have been packaged in a TO3-package at CIRTEM facilities. A Silgel TM from Vacker is used for the encapsulation. Its operating temperature is 150°C. We will plan to use another kind of package to increase this temperature of characterization. Packaging Figure 4 show a section of the dual side cooling power module designed for HT° 1200V SiC and MT° 3500V SiC chips with interconnections by bump, design by CIRTEM. This structure consists on a superposition of two insulated substrates where a great care has been taken on the compatibility between materials to a mechanical, electrical and thermal point of view. After the upper substrate soldering, we obtain a compact structure, near-symmetrical, allowing multi-degree of freedom, on thermo-mechanical, thermal and/or electrical aspects. This technology allows excellent cooling while maintaining low interconnect inductance and compatibility with HV and HT°. Fig. 4: Dual side cooling packaging [3] Conclusions Final applications target by this pilot line are the electricity distribution networks, rail, aerospace, commercial and military aircraft, naval propulsion, military equipment (electromagnetic weapons and directed, MFP, active protections effects ..), the oil exploitation, control of high power equipment (motors, generators ...) for new energy, industry and major physics experiments. Mounted by the combination of agile and innovative companies, mainly based on pre-existing resources, skills and maintained on a strong experience of services for niche markets, this project addresses a strategic need for less expensive way to launch a start-up dedicated or conversion of industrial site silicon components. Acknowledgment The authors want to thank the Bpifrance Financement SA for its financial support in the framework of the FilSiC project. References 1 C. Raynaud, D. Tournier, H. Morel, and D. Planson, Diam. Rel. Mat. Vol. 19 (2010), pp. 1-6 2 F. Chevalier, G. Grosset, L. Dupuy, D. Tournier, D. Planson, P. Brosselard, A path toward high voltage devices : 3.3 kV 4H-SiC JBS and JFET, HETECH2012 barcelona, 2012. 3 Interconnection technology for new wide band gap semiconductors, C. Duchesne, P. Cussac, X. Chauffleur, EPE'13 ECCE Europe, 2013