RF SOI dans 100% de nos smartphones

11/12/2015
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RF SOI dans 100% de nos smartphones

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<resource  xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"
                xmlns="http://datacite.org/schema/kernel-4"
                xsi:schemaLocation="http://datacite.org/schema/kernel-4 http://schema.datacite.org/meta/kernel-4/metadata.xsd">
        <identifier identifierType="DOI">10.23723/1156/14602</identifier><creators><creator><creatorName>Jean-Pierre Raskin</creatorName></creator></creators><titles>
            <title>RF SOI dans 100% de nos smartphones</title></titles>
        <publisher>SEE</publisher>
        <publicationYear>2015</publicationYear>
        <resourceType resourceTypeGeneral="Text">Text</resourceType><dates>
	    <date dateType="Created">Fri 11 Dec 2015</date>
	    <date dateType="Updated">Mon 25 Jul 2016</date>
            <date dateType="Submitted">Fri 20 Apr 2018</date>
	</dates>
        <alternateIdentifiers>
	    <alternateIdentifier alternateIdentifierType="bitstream">ad36bc9543e031fca407c6f6c4acd7e4ba3818cb</alternateIdentifier>
	</alternateIdentifiers>
        <formats>
	    <format>application/pdf</format>
	</formats>
	<version>24918</version>
        <descriptions>
            <description descriptionType="Abstract"></description>
        </descriptions>
    </resource>
.

RF SOI dans 100% de nos smartphones Prof. Jean-Pierre Raskin Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM) Université catholique de Louvain (UCL) 1348 Louvain-la-Neuve, Belgium Email: jean-pierre.raskin@uclouvain.be Cérémonie des Grands Prix SEE - Lundi 7 décembre 2015 - Paris Context – everything turns mobile 9 18 Exabytes per Month Mobile DataTraffic 61% CAGR 2013-2018 Mobile File Sharing (2,9%) Mobile M2M (5,7%) Mobile Audio (10,6%) Mobile Web/Data (11,7%) Mobile Video (69,1%) 0 9 18 2013 2014 2015 2016 2017 2018 Exabytes per Month Mobile DataTraffic 61% CAGR 2013-2018 Mob Mob Mob Mob Mob Needs for highly linear systems 10k 100k 1M 10M 100M 1G Bit/s 1G 2G 3G 4G Network Linearity (IIP3 in dBm) 2G 55 3G 65 4G LTE 72 4G LTE + CA Up to 90 Source: Intel Mobile, L. Schumacher, Nov. 2012 Processed wafer Multiple raw dice per wafer Packaged Die (Integrated Circuit) Silicon die with millions of transistors Starting wafer Application Board (PCB) ex. SOI transistor S DG Top Silicon Layer Buried Oxide Base Silicon ex. SOI substrate Consumer Devices Si substrate contributes to the system performance Engineered substrate Trap-rich Silicon-on-Insulator substrate Rapid adoption of RF SOI switch The new SOI substrate is used by all the major CMOS foundries History of RF SOI 2009 2011 • Soitec Smart Cut™ SOI • UCL R&D work on HR-SOI Trap Rich SOI by UCL and Soitec HR-SOI High Volume Manufacturing eSI™ ramp Bonded Silicon-on- Sapphire by Soitec & Peregrine 2005 1992 2014 1st Power Amplifier on RF-SOI RF switch demo on HR-SOI 2003 2012 RF switch on SOI becomes industry mainstream PhD thesis RF SOI potentials Technological solution for better substrates Major industrial player asks for better substrates Mass market products 15-20 years from discovery to products innovation High Resistivity Si Base Trap rich layer SiO2 (BOX) Mono-crystal Top Silicon Enhanced Signal Integrity SOI - eSI™ MOS capacitor High Resistivity Si Base Trap rich layer SiO2 (BOX) Mono-crystal Top Silicon Fixed charges DC bias + RF Enhanced Signal Integrity SOI - eSI™ ~ Redistribution of carriers in the substrate Enhanced Signal Integrity SOI - eSI™ High Resistivity Si Base Trap rich layer SiO2 (BOX) Mono-crystal Top Silicon Fixed charges Mobile & Interface trapped Charges (PSC) DC bias + RF ~ Traps freeze the mobile carriers at the substrate interface BOX TRAP RICH HR-Si Fabricated eSI™ substrates at SOITEC Main features  Handle Si substrate resistivity (> 3 kW.cm)  Trap-rich layer: highly resistive polysilicon layer  Trap-rich layer: large number of small grains  Thermal stability of trap-rich layer (SOI wafer and SOI CMOS manufacturing) Non-linearities along interconnection lines -60 dBSPECS Integration of many different frequency tones → urgent need for highly linear devices [C. Roda Neve, J.-P. Raskin, IEEE TED’13] [D. Kerr, C. Roda Neve, J.-P. Raskin, SiRF’08] RF Loss Linearity HighQ Passives Die Size Thermal Conductivity Crosstalk eSI vs. HR-SOI performance HR-SOI eSI eSI™ versus HR SOI substrates RF-SOI enables Full Front End module integration M O D E M + T R A N S C E I V E R Supply Modulator Antenna Swap switch Antenna Swich Module Filter Bank PA Mode switch Power Amplifier 3G LTE 2G 3G LTE 2G Tx High Band Tx Low Band MIPI Rx High Band Rx diversity Diplexer Coupler Rx diversity Swich Antenna Tuner Rx Low Band  RF-SOI enables Full Front End module integration M O D E M + T R A N S C E I V E R Supply Modulator Antenna Swap switch Antenna Swich Module Filter Bank PA Mode switch Power Amplifier 3G LTE 2G 3G LTE 2G Tx High Band Tx Low Band MIPI Rx High Band Rx diversity Diplexer Coupler Rx diversity Swich Antenna Tuner Rx Low Band   RF-SOI enables Full Front End module integration M O D E M + T R A N S C E I V E R Supply Modulator Antenna Swap switch Antenna Swich Module Filter Bank PA Mode switch Power Amplifier 3G LTE 2G 3G LTE 2G Tx High Band Tx Low Band MIPI Rx High Band Rx diversity Diplexer Coupler Rx diversity Swich Antenna Tuner Rx Low Band    RF-SOI enables Full Front End module integration M O D E M + T R A N S C E I V E R Supply Modulator Antenna Swap switch Antenna Swich Module Filter Bank PA Mode switch Power Amplifier 3G LTE 2G 3G LTE 2G Tx High Band Tx Low Band MIPI Rx High Band Rx diversity Diplexer Coupler Rx diversity Swich Antenna Tuner Rx Low Band 3G LTE     RF-SOI enables Full Front End module integration M O D E M + T R A N S C E I V E R Supply Modulator Antenna Swap switch Antenna Swich Module Filter Bank PA Mode switch Power Amplifier 3G LTE 2G 3G LTE 2G Tx High Band Tx Low Band MIPI Rx High Band Rx diversity Diplexer Coupler Rx diversity Swich Antenna Tuner Rx Low Band 3G LTE      RF-SOI enables Full Front End module integration M O D E M + T R A N S C E I V E R Supply Modulator Antenna Swap switch Antenna Swich Module Filter Bank PA Mode switch Power Amplifier 3G LTE 2G 3G LTE 2G Tx High Band Tx Low Band MIPI Rx High Band Rx diversity Diplexer Coupler Rx diversity Swich Antenna Tuner Rx Low Band 3G LTE      Take away – challenges at different levels … Back-end RC parasitics – thick metal, CNTs, low-k Front-end – new materials, transistors Substrate Losses, crosstalk, thermal issues, linearity, … Look behind the mirror … Don’t be blind by your own illusion(s) or/and by the common way of thinking Don’t forget, problem might actually turns to solution in another context Defects, surface states = degradation of MOSFET (↓ µ, ↓ I, ↓ speed, ↓ fT, …) But elegant and cheap solution for RF SOI substrates Take away – defects become beauty… Acknowledgements • Dr. J.-P. Colinge (PhD thesis supervisor) • PhD Students: D. Lederer, C. Roda Neve, K. Ben Ali, M. Rack • SOITEC: C. Mazuré, I. Radu, F. Allibert, E. Desbonnets, C. Malaquin, N. Milhet, for the common investigations on TR HR SOI • T. McKay (RFMD)